Vertical cavity surface emitting laser and method of manufacturing thereof
US8040934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1835
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.