Patent · US Active

Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof

US8043872B2 · kind B2 · utility

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2References

7Claims

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Assignee

INSTITUTE OF PHYSICS, THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Hong-Yi Chen · Fremont, US
Haiqiang Jia · Beijing, CN
Liwei Guo · San Diego, US
Wenxin Wang · Beijing, CN
Junming Zhou · Zhejiang, CN

Key dates

Filing date	Aug 15, 2007
Grant date	Oct 25, 2011
Priority date	—
Expiry date	Nov 4, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/956
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.