Method for manufacturing solid-state imaging device having improved sensitivity and reduced flare
US8043883B2 · kind B2 · utility
4Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2011 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | May 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.