Patent · US Active

Porous semiconductive film and process for its production

US8043909B2 · kind B2 · utility

3Cited by

3References

13Claims

0Family size

Assignee

EVONIK DEGUSSA GMBH · DE

Inventors

Andre Ebbers · Bochum, DE
Martin Trocha · Essen, DE
Robert Lechner · Otterfing, DE
Martin Brandt · Schömberg, DE
Martin Stutzmann · Erding, DE
Hartmut Wiggers · Reken, DE

Key dates

Filing date	Mar 21, 2008
Grant date	Oct 25, 2011
Priority date	—
Expiry date	Jun 30, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/96
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10−8 S·cm−1 to 10 S·cm−1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.