Patent · US Active

Mixture for doping semiconductors

US8043946B2 · kind B2 · utility

0Cited by

7References

10Claims

0Family size

Assignees

Centrotherm Photovoltaics AG · DE
Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

Daniel Biro · Glückstadt, DE
Catherine Voyer · Konstanz, DE
Harald Wanka · Reutlingen, DE
Jörg Koriath · Blaubeuren, DE

Key dates

Filing date	May 31, 2006
Grant date	Oct 25, 2011
Priority date	—
Expiry date	Mar 9, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.