Semiconductor device manufacturing method and design support apparatus
US8043948B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 21, 2010 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Apr 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device manufacturing method includes: forming a conductive film over a substrate; forming an assist pattern on the conductive film; forming a metal film to cover the conductive film and the assist pattern; etching back the metal film to form at least one side wall film on a side surface of the assist pattern; removing the assist pattern; forming at least one resist pattern to selectively expose a portion of the conductive film and a portion of the side wall film; performing etching using the resist pattern as a mask to remove the exposed portion of the side wall film; and etching the conductive film using the side wall film as a mask to form a gate electrode and a contact region electrically connected to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.