Semiconductor device including an LSI chip and a method for manufacturing the same
US8043953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2008 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Jun 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that can be readily manufactured, can include a large number of pads, and can be thin, and a method for manufacturing the same are provided. The semiconductor device is characterized in that the semiconductor device includes an LSI chip, an insulating layer provided on the LSI chip and made of a nonphotosensitive resin, the insulating layer including a via hole in the position corresponding to an externally connected pad, and a wiring layer extending along the insulating layer through the via hole to the externally connected pad, and at least part of the via hole is formed by irradiating the insulating layer with laser light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.