Method of forming a through substrate via in a compound semiconductor
US8043965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2009 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Jul 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a through substrate via in a compound semiconductor having a transistor on a front side of the substrate. The method comprises forming a protective stop pad over a contact area on the front side of the substrate, forming a contact pad overlying the protective stop pad, such that the contact pad is in contact with a terminal of the transistor and plasma etching a backside of the substrate to form a contact coupling via to the protective stop pad. The method further comprises performing a chemical wet etch to remove the protective stop pad and depositing a conductive contact layer in the contact coupling via to provide a conductive contact to the contact pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.