Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
US8043977B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 7, 2006 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Jun 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α<1, M is a Group V element except nitrogen).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.