White light-emitting diode and its light conversion layer
US8044410B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jul 6, 2009 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Dec 4, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B20/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a specific wavelength and a light conversion layer so as to generate white light. Further, the present invention also discloses a light conversion layer and its fluorine oxygen garnet phosphor powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.