GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage
US8044433B2 · kind B2 · utility
8Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2006 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Jul 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.