Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same
US8044434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2007 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Jan 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
The semiconductor device includes a P-type group III-V nitride semiconductor layer, an N-type group III-V nitride semiconductor layer, and an electrode in contact with both of the P-type group III-V nitride semiconductor layer and the N-type group III-V nitride semiconductor layer. The electrode includes a first electrode portion made of a first conductive material, and a second electrode portion, made of a second conductive material different from the first conductive material, bonded to the first electrode portion. The first electrode portion is in contact with the P-type group III-V nitride semiconductor layer, and the second electrode portion is in contact with the N-type group III-V nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.