Sub-pixel nBn detector
US8044435B2 · kind B2 · utility
11Cited by
4References
36Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 13, 2007 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.