Light-emitting device and manufacturing method of the same
US8044439B2 · kind B2 · utility
4Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Sep 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.