Patent · US Active

Semiconductor wafer inspection method

US8045150B2 · kind B2 · utility

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4Claims
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Key dates

Filing dateSep 8, 2009
Grant dateOct 25, 2011
Priority date
Expiry dateMar 22, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/9503
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor wafer inspection method includes: an imaging step in which a first image being an image of the chamfered surface seen from the main surface side and a second image being an image of the chamfered surface seen from the back surface side are taken; a calculation step in which a first width is obtained based on the first image, the first width being a width of the chamfered surface seen from the main surface side, a second width is obtained based on the second image, the second width being a width of the chamfered surface seen from the back surface side, and a ratio of the first width to the second width thus obtained is calculated; and a shape determination step in which a form of the chamfered surface is determined to be abnormal in a case where the ratio is out of a predetermined range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.