Patent · US Active

Doped Gd5Ge2Si2 compounds and methods for reducing hysteresis losses in Gd5Ge2Si2 compound

US8048236B2 · kind B2 · utility

2Cited by

2References

8Claims

0Family size

Assignee

The United States of America, as Represented by the Secretary of Commerce National Institute of Standards and Technology · US

Inventors

Robert D. Shull · Boyds, US
Alexander J. Shapiro · Rockville, US
Virgil Provenzano · Gaithersburg, US

Key dates

Filing date	Oct 26, 2009
Grant date	Nov 1, 2011
Priority date	—
Expiry date	Nov 13, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01F1/017
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A Gd5Ge2Si2 refrigerant compound is doped or alloyed with an effective amount of silicide-forming metal element such that the magnetic hysteresis losses in the doped Gd5Ge2Si2 compound are substantially reduced in comparison to the hysteresis losses of the undoped Gd5Ge2Si2 compound. The hysteresis losses can be nearly eliminated by doping the Gd5Ge2Si2 compound with iron, cobalt, manganese, copper, or gallium. The effective refrigeration capacities of the doped Gd5Ge2Si2 compound are significantly higher than for the undoped Gd5Ge2Si2 compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.