Etching composition and etching process
US8048331B2 · kind B2 · utility
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3References
7Claims
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Key dates
| Filing date | Nov 10, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Nov 10, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.