Patent · US Active

Sensing chip

US8048385B2 · kind B2 · utility

3Cited by
1References
6Claims
0Family size

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Key dates

Filing dateDec 31, 2008
Grant dateNov 1, 2011
Priority date
Expiry dateMay 5, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/7703
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.