Magnetoresistive effect element and manufacturing method thereof
US8048492B2 · kind B2 · utility
55Cited by
87References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2006 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Mar 5, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.