Light emitting diode devices and manufacturing method thereof
US8048696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Mar 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
Abstract
A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.