Sulfur salt containing CIG targets, methods of making and methods of use thereof
US8048707B1 · kind B1 · utility
8Cited by
51References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Oct 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.