Photoelectric conversion device and method for producing photoelectric conversion device
US8048710B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 22, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Jul 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refractive index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refractive index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.