Patent · US Active

Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities

US8048714B2 · kind B2 · utility

3Cited by
7References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 9, 2007
Grant dateNov 1, 2011
Priority date
Expiry dateAug 4, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1815
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device mountable to a substrate includes a semiconductor die and an electrically conductive attachment region having a first attachment surface and a second attachment surface. The first attachment surface is arranged for electrical communication with the semiconductor die. A housing at least in part encloses the semiconductor die and the interlayer material. The housing has a recess disposed through the second attachment surface of the electrically conductive attachment region. A dielectric, thermally conductive interlayer material is located in the recess and secured to the housing. A metallic plate is located in the recess and secured to the interlayer material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.