Method for manufacturing semiconductor device
US8048770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Sep 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0214
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.