Semiconductor memory device having variable resistance element and method for manufacturing the same
US8049204B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | May 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity changes by applying voltage, and a second region formed by doping a metal element to the variable resistance material such that a resistivity of the second region is higher than that of the first region and is not changed by applying a voltage used to change the resistivity of the first region. The first region is in contact with the first electrode and the second electrode, and extends from one electrode side to the other electrode side. The second region is provided outside the first region in at least part of the current path forming region in direction extending from one electrode side to the other electrode side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.