Organic field effect transistor and semiconductor device
US8049206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2007 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Jan 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/46
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.