Thin film transistor, matrix substrate, electrophoresis display device, and electronic apparatus
US8049210B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 20, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | May 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a thin film transistor including a substrate, a source electrode and a drain electrode disposed above the substrate so as to oppose each other, an organic semiconductor film disposed between the source electrode and the drain electrode to generate a channel region, and a gate electrode disposed opposite the organic semiconductor film via a gate insulating film. The gate electrode includes an aperture in the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.