Patent · US Active

Light-emitting device

US8049233B2 · kind B2 · utility

31Cited by
6References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 9, 2007
Grant dateNov 1, 2011
Priority date
Expiry dateMar 9, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/858

Abstract

A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including recesses and projections formed in a pitch larger than a wavelength of light emitted from the light-emitting layer 12, the recess/projection portion 14 being formed in a whole area or a partial area of the surface of the semiconductor layer which light is emitted from; and a reflective layer formed on an opposite surface of the semiconductor layer to the surface from which light is emitted, the reflective layer having a reflectance of 90% or more. According to the light-emitting device having such arrangement, the light can be emitted efficiently by synergetic effect of the reflective layer and the recess/projection portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.