Optoelectronic device

US8049242B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Jin-Ywan Lin · Kaohsiung, TW
• Jen-Chau Wu · Hsinchu, TW
• Chih-Chiang Lu · New Taipei, TW
• Wei-Chih Peng · Hsinchu, TW
• Ching-Pu Tai · Hsinchu, TW
• Shih-I Chen · Hsinchu, TW

Key dates

• Filing date: Jul 13, 2010
• Grant date: Nov 1, 2011
• Expiry date: Jul 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018

Abstract

An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.