Asymmetric bidirectional silicon-controlled rectifier
US8049247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Dec 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first conduction type undoped epitaxial layer formed on the substrate; a first well and a second well both formed inside the undoped epitaxial layer and separated by a portion of the undoped epitaxial layer; a first buried layer formed in a junction between the first well and the substrate; a second buried layer formed in a junction between the second well and the substrate; a first and a second semiconductor area with opposite conduction type both formed inside the first well; a third and a fourth semiconductor area with opposite conduction type both formed inside the second well, wherein the first and second semiconductor areas are connected to the anode of the silicon-controlled rectifier, and the third and fourth semiconductor areas are connected to the cathode of the silicon-controlled rectifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.