Semiconductor transformers
US8049301B2 · kind B2 · utility
55Cited by
4References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Oct 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F2027/2819
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A planar transformer structure, which can be constructed in an integrated semiconductor circuit without using traditional metallic windings. To avoid large thermal expansion of metallic spiral windings and associated mechanical stress on a metal-semiconductor interface, it is suggested that highly doped semiconductor materials with or without silicides and salicides can be used to form windings or conducting paths because their thermal expansion coefficients are similar to that of semiconductor material. The planar semiconductor transformer may find application for low-power and signal transfer that needs electrical isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.