Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices
US8049307B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Apr 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A P+ doped drain region is disposed in the high-V N-well. A P+ diffused region and an N+ doped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the N+ doped source region and the other end extending over the insulation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.