Level shifter circuit with a thin gate oxide transistor
US8049532B1 · kind B1 · utility
10Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Jun 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03L7/087
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A level shifting circuit with a thin gate transistor connected to the input of the output stage is presented. The level shifting circuit has an input stage that receives an input that is at first voltage. A transistor with a thin gate oxide has one terminal connected to the input stage and another terminal coupled to an input of the output stage. The output stage of the level shifting circuit is implemented with thick gate oxide transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.