Magnetoresistive element including a pair of free layers coupled to a pair of shield layers
US8049997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | May 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.