Phase change memory device and write method thereof
US8050083B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | May 10, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device and a write method thereof allow writing of both volatile and non-volatile data on the phase change memory device. The phase change memory device may be written by setting a write mode as one of a volatile write mode and a non-volatile write mode, and writing data as volatile or non-volatile by applying a write pulse corresponding to the write mode, wherein, when power is not supplied to the phase change memory device, the non-volatile data is retained and the volatile data is not retained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.