Solar cell and manufacturing method of the solar cell
US8053666B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 15, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Feb 16, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A p type amorphous silicon layer is stacked, by a CVD method, on a main surface of an n type single-crystalline silicon substrate; an n type amorphous silicon layer is stacked, by the CVD method, on a surface opposite to the surface on which the p type amorphous silicon layer is stacked; and, by using a laser ablation processing method, through-holes are formed in the n type single-crystalline silicon substrate, the p type amorphous silicon layer, and the n type amorphous silicon layer. Subsequently, an insulating layer is formed on an inner wall surface of each of the through-holes, and then a conductive material is filled therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.