Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same
US8053761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2006 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Sep 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/103
Abstract
Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.