Image sensor with high conversion efficiency
US8053821B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2009 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Oct 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.