Semiconductor integrated circuit devices having contacts formed of single-crystal materials
US8053831B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/908
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory cell of memory device, comprises an active region of a memory cell defined in a semiconductor substrate, and a conductive gate electrode in a trench of the active region. The gate electrode is isolated from the semiconductor substrate. An insulation layer is on the active region and on the conductive gate electrode. A conductive contact is in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode. The contact has a first width at a top portion thereof and a second width at a bottom portion thereof, the first width being greater than the second width. The contact is formed of a single-crystal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.