Thin film transistor comprising novel conductor and dielectric compositions

US8053840B2 · kind B2 · utility

Assignee

• E.I. DU PONT DE NEMOURS AND COMPANY · US

Inventors

• Richard Kevin Bailey · Newark, US
• Graciela Beatriz Blanchet · Boston, US
• John Catron · Smyrna, US
• Reid John Chesterfield · Lompoc, US
• Marc B. Goldfinger · West Chester, US
• Gary Delmar Jaycox · West Chester, US
• Lynda Kaye Johnson · Wilmington, US
• Irina Malajovich · Swarthmore, US
• Hong Meng · Lo Wu, CN
• Jeffrey Scott Meth · Landenberg, US
• Kenneth George Sharp · Landenberg, US
• Rinaldo S. Schiffino · Wilmington, US
• Feng Gao · Beijing, CN
• Gerald Donald Andrews · Hockessin, US

Key dates

• Filing date: Mar 13, 2009
• Grant date: Nov 8, 2011
• Expiry date: Jul 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/655

Abstract

The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.