Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants

US8053867B2 · kind B2 · utility

Assignee

• HONEYWELL INTERNATIONAL INC. · US

Inventors

• Hong Min Huang · Shanghai, CN
• Carol Gao · Shanghai, CN
• Zhe Ding · Shanghai, CN
• Albert Peng · Shanghai, CN
• Ya Qun Liu · Shanghai, CN

Key dates

• Filing date: Aug 20, 2008
• Grant date: Nov 8, 2011
• Expiry date: Jan 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2225
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.