Low variation resistor
US8054156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Sep 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This document discloses low variation resistor devices, methods, systems, and methods of manufacturing the same. In some implementations, a low-variation resistor can be implemented with a metal-oxide-semiconductor field-effect-transistor (“MOSFET”) operating in the triode (e.g., ohmic) region. The MOSFET can have a source that is connected to a reference voltage (e.g., ground) and a gate connected to a gate voltage source. The gate voltage source can generate a gate voltage that varies in proportion to changes in the temperature of an operating environment. The gate voltage variation can, for example, be controlled so that it offsets the changes in MOSFET resistance that are caused by changes in temperature. In some implementations, the gate voltage variation offsets the resistance variance by offsetting changes in transistor mobility that are caused by changes in temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.