Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
US8054674B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 7, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Jun 3, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.