Phase change memory device
US8054679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Sep 8, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device comprises: a phase change element for rewritably storing data by changing a resistance state; a memory cell arranged at an intersection of a word line and a bit line and formed of the phase change element and a diode connected in series; a select transistor formed in a diffusion layer below the memory cell, for selectively controlling electric connection between an anode of the diode and a ground line in response to a potential of the word line connected to a gate; and a precharge circuit for precharging the diffusion layer below the memory cell corresponding to a non-selected word line to a predetermined voltage and for disconnecting the diffusion layer below the memory cell corresponding to a selected word line from the predetermined voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.