Patent · US Active

Write access and subsequent read access to a memory device

US8055857B2 · kind B2 · utility

3Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2007
Grant dateNov 8, 2011
Priority date
Expiry dateJul 8, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/1093
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device has a first memory area and a second memory area. A method for operating the memory device includes a write access to the first memory area and a read access to the second memory area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.