Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
US8056504B2 · kind B2 · utility
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15References
12Claims
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Key dates
| Filing date | Feb 19, 2010 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Feb 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32541
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.