Patent · US Active

Electrostatic force assisted deposition of graphene

US8057863B2 · kind B2 · utility

6Cited by

1References

12Claims

0Family size

Assignee

The Regents of the University of California · US

Inventor

Xiaogan Liang · Ann Arbor, US

Key dates

Filing date	Dec 4, 2009
Grant date	Nov 15, 2011
Priority date	—
Expiry date	Jul 16, 2030

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01B32/19
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

An embodiment of a method of depositing graphene includes bringing a stamp into contact with a substrate over a contact area. The stamp has at least a few layers of the graphene covering the contact area. An electric field is developed over the contact area. The stamp is removed from the vicinity of the substrate which leaves at least a layer of the graphene substantially covering the contact area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.