Nonvolatile semiconductor memory and method of manufacturing the same
US8058162B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 7, 2010 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Apr 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method of manufacturing a nonvolatile semiconductor memory includes: forming an insulator structure on a semiconductor substrate in a first region; forming a first gate insulating film on the semiconductor substrate outside the first region; blanket depositing a first gate material film and etching-back the first gate material film to form a first gate electrode on the first gate insulating film lateral to the insulator structure; removing the insulator structure; blanket forming a second gate insulating film; blanket depositing a second gate material film and etching-back the second gate material film to form a second gate electrode on the second gate insulating film in the first region; and silicidation of upper surfaces of the first and second gate electrodes. Any one of the first and second gate insulating films is a charge trapping film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.