Method of fabricating semiconductor device having metal-semiconductor compound regions
US8058168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2010 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
Example embodiments relate to methods of fabricating a semiconductor device having a metal-semiconductor compound region. A method according to example embodiments may include forming semiconductor pillars on a semiconductor substrate. The semiconductor substrate between the semiconductor pillars may be etched to form a trench region. A dielectric isolation pattern partially filling the trench region may be formed, and dielectric sidewall spacers may be formed on sidewalls of the semiconductor pillars. Metal-semiconductor compound regions may be formed on sidewalls of a portion of the trench region that is not filled by the isolation pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.