Method for treating semiconductor processing components and components formed thereby
US8058174B2 · kind B2 · utility
7Cited by
63References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 15, 2008 |
| Grant date | Nov 15, 2011 |
| Priority date | — |
| Expiry date | Jun 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67316
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns into the outer surface portion, and the skin impurity level is not greater than 80% of the bulk impurity level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.